Low-frequency noise characteristics in p-channel FinFETs

被引：24

作者：

Lee, JS ^{[1
]}

Choi, YK ^{[1
]}

Ha, D ^{[1
]}

King, TJ ^{[1
]}

Bokor, J ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 12期

关键词：

double-gate; FinFET; low-frequency noise; metal gate; molybdenum; silicon-on-insulator (SOI); ultrathin body;

D O I：

10.1109/LED.2002.805741

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the characterization of low-frequency noise in fully depleted (FD) double-gate p-channel FinFETs. While the average noise follows a 1/f dependence, considerable device-to-device variations in noise level are observed due to the statistical fluctuation of the number of oxide traps involved. We found that the low-frequency noise in poly-Si-gated p-FinFETs is mainly governed by the carrier number fluctuation with correlated mobility fluctuation. The low-frequency noise characteristics indicate that the FinFET device can be a promising candidate for analog and RF applications.

引用

页码：722 / 724

页数：3

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