Activation energy determination for recrystallization in electroplated-copper films using differential scanning calorimetry

被引:12
作者
Donthu, SK [1 ]
Vora, MM
Lahiri, SK
Thompson, CV
Yi, S
机构
[1] Singapore MIT Alliance, Singapore 117543, Singapore
[2] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
关键词
DSC; self-annealing; copper; electroplating;
D O I
10.1007/s11664-003-0138-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The apparent activation energy for recrystallization during self-annealing of 1.5-mum-thick electroplated copper films was determined using constant-heating-rate scans in a differential scanning calorimeter (DSC). The apparent-activation energy was measured to be 0.62 eV/atom. Ex-situ microscopy studies showed that self-annealing in electroplated Cu films is characterized by site-saturated nucleation and diffusion-limited, two-dimensional grain growth. For a transformation with these characteristics, the apparent activation energy measured using a differential scanning calorimeter corresponds to the activation energy for grain-boundary motion. The measured activation energy is reasonably close to values reported for grain boundary motion from in-situ microscopy studies. The value is also close to the activation energy for grain boundary diffusion in Cu. This work demonstrates the feasibility of using differential scanning calorimetry (DSC) as a relatively straightforward method to study the kinetics of the self-annealing process.
引用
收藏
页码:531 / 534
页数:4
相关论文
共 9 条
  • [1] Damascene copper electroplating for chip interconnections
    Andricacos, PC
    Uzoh, C
    Dukovic, JO
    Horkans, J
    Deligianni, H
    [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1998, 42 (05) : 567 - 574
  • [2] Christian J. W., 1965, INT SERIES MONOGRAPH, V7
  • [3] Full copper wiring in a sub-0.25 μm CMOS ULSI technology
    Edelstein, D
    Heidenreich, J
    Goldblatt, R
    Cote, W
    Uzoh, C
    Lustig, N
    Roper, P
    McDevitt, T
    Motsiff, W
    Simon, A
    Dukovic, J
    Wachnik, R
    Rathore, H
    Schulz, R
    Su, L
    Luce, S
    Slattery, J
    [J]. INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, : 773 - 776
  • [4] GUPTA D, 1998, DIFFUSION PHENOMENON, P23
  • [5] Mechanisms for microstructure evolution in electroplated copper thin films near room temperature
    Harper, JME
    Cabral, C
    Andricacos, PC
    Gignac, L
    Noyan, IC
    Rodbell, KP
    Hu, CK
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 86 (05) : 2516 - 2525
  • [6] In situ transmission electron microscope studies of the kinetics of abnormal grain growth in electroplated copper films
    Hau-Riege, SP
    Thompson, CV
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (03) : 309 - 311
  • [7] KISSINGER HE, 1957, ANAL CHEM, V29, P1702, DOI DOI 10.1021/AC60131A045
  • [8] SHEWMON P, 1989, DIFFUSION SOLIDS, P78
  • [9] SECONDARY GRAIN-GROWTH IN THIN-FILMS OF SEMICONDUCTORS - THEORETICAL ASPECTS
    THOMPSON, CV
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) : 763 - 772