Impact of vacuum environment on the hot embossing process

被引:15
作者
Roos, N [1 ]
Wissen, M [1 ]
Glinsner, T [1 ]
Scheer, HC [1 ]
机构
[1] Berg Univ Wuppertal, D-42119 Wuppertal, Germany
来源
EMERGING LITHOGRAPHIC TECHNOLOGIES VII, PTS 1 AND 2 | 2003年 / 5037卷
关键词
hot embossing lithography; wafer-scale imprint; vacuum embossing;
D O I
10.1117/12.482750
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
One of the key questions concerning the concept of a system for hot embossing lithography is whether or not it should provide for imprinting under vacuum. We have performed experiments comparing the embossing in vacuum and in atmospheric pressure in a semi-automated imprint system. The stamps used were fully patterned, 10 cm diameter with pattern sizes ranging from 400 nm to 100 mum. It turned out that vacuum enhances the large area uniformity of the imprint by avoiding an air cushion remaining between stamp and sample during automated contact after a non-contact assembly and alignment step. Lower molecular weight polymers turned out to be more sensitive to uniformity deviation than higher molecular weight materials. Detailed analysis showed that defects typically found for relatively high processing temperatures, caused by overheated compressed air, remaining solvent in the polymer layer or even beginning polymer decomposition could be reduced substantially under vacuum embossing conditions, where the excess volume of the polymer is evacuated and free to accommodate gaseous constituents. The best result with complete cavity filling and negligible defects was obtained for imprint of a 99 kg/mol polymer at 200 degreesC and 50 bar under vacuum. Residual layers measured across the diameter of the sample were 44.5 nm +/- 9.8 nm. The non-uniformity of the residual layer is a result of the locally different pattern sizes and pattern densities of the stamp, typical for all mechanical patterning processes.
引用
收藏
页码:211 / 218
页数:8
相关论文
共 9 条
[1]   Fabrication of 70 nm channel length polymer organic thin-film transistors using nanoimprint lithography [J].
Austin, MD ;
Chou, SY .
APPLIED PHYSICS LETTERS, 2002, 81 (23) :4431-4433
[2]   Improving stamps for 10 nm level wafer scale nanoimprint lithography [J].
Beck, M ;
Graczyk, M ;
Maximov, I ;
Sarwe, EL ;
Ling, TGI ;
Keil, M ;
Montelius, L .
MICROELECTRONIC ENGINEERING, 2002, 61-2 :441-448
[3]   Lithographically induced self-assembly of periodic polymer micropillar arrays [J].
Chou, SY ;
Zhuang, L .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06) :3197-3202
[4]   Mask definition by nanoimprint lithography [J].
Lyebyedyev, D ;
Scheer, HC .
17TH EUROPEAN CONFERENCE ON MASK TECHNOLOGY FOR INTEGRATED CIRCUITS AND MICROCOMPONENTS, 2001, 4349 :82-85
[5]   Nanoscale patterning of magnetic islands by imprint lithography using a flexible mold [J].
McClelland, GM ;
Hart, MW ;
Rettner, CT ;
Best, ME ;
Carter, KR ;
Terris, BD .
APPLIED PHYSICS LETTERS, 2002, 81 (08) :1483-1485
[6]   Nanoimprint Lithography with a commercial 4 inch bond system for hot embossing [J].
Roos, N ;
Luxbacher, T ;
Glinsner, T ;
Pfeiffer, K ;
Schulz, H ;
Scheer, HC .
EMERGING LITHOGRAPHIC TECHNOLOGIES V, 2001, 4343 :427-435
[7]   A contribution to the flow behaviour of thin polymer films during hot embossing lithography [J].
Scheer, HC ;
Schulz, H .
MICROELECTRONIC ENGINEERING, 2001, 56 (3-4) :311-332
[8]   Pattern formation in hot embossing of thin polymer films [J].
Schift, H ;
Heyderman, LJ ;
Maur, MAD ;
Gobrecht, J .
NANOTECHNOLOGY, 2001, 12 (02) :173-177
[9]  
Van Krevelen D.W., 1990, Properties of Polymers