Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 μm

被引:255
作者
Choquette, KD
Klem, JF
Fischer, AJ
Blum, O
Allerman, AA
Fritz, IJ
Kurtz, SR
Breiland, WG
Sieg, R
Geib, KM
Scott, JW
Naone, RL
机构
[1] Sandia Natl Labs, Ctr Compound Semicond Sci & Technol, Albuquerque, NM 87185 USA
[2] Cielo Commun Inc, Broomfield, CO 80021 USA
关键词
D O I
10.1049/el:20000928
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Selectively oxidised vertical-cavity lasers emitting at 1294nm using InGaAsN/GaAs quantum wells which exhibit continuous wave operation at and above room temperature are reported for the first time. The lasers employ two n-type Al0.94Ga0.06As/GaAs distributed Bragg reflectors each with a selectively oxidised current aperture adjacent to the optical cavity, and the top output mirror contains a tunnel junction to inject holes into the active region. Continuous wave singlemode lasing is observed up to 55 degrees C. These lasers exhibit the longest wavelength reported to date for vertical-cavity surface lasers grown on GaAs substrates.
引用
收藏
页码:1388 / 1390
页数:3
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