Reproducible unipolar resistance switching in stoichiometric ZrO2 films

被引：158

作者：

Wu, X. ^{[1
]}

Zhou, P.

Li, J.

Chen, L. Y.

Lin, H. B. Lv Y. Y.

Tang, T. A.

机构：

[1] Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China

[2] Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China

[3] Fudan Univ, State Key Lab Adv Photon Mat, Shanghai 200433, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 18期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2734900

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The resistance switching characteristics of stoichiometric ZrO2 film were investigated for nonvolatile memory. The Al/ZrO2/Al device presents reliable and reproducible switching behaviors. The on/off ratio of two stable states is larger than 2x10(3). It is suggested that the current-voltage characteristics are governed by the Schottky conduction mechanism in high voltage region, while the filament conduction is suggested in low voltage region. The switching process is explained in terms of the spontaneous reversible reaction between electrode and ZrO2 films with the contribution of Joule heating effect by the external current. It provides a possible solution for low device yield of nonstoichiometric oxides. (c) 2007 American Institute of Physics.

引用

页数：3

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