Formation of Ti-Al-N films by an activated reactive evaporation (ARE) method

被引：5

作者：

Ide, Y ^{[1
]}

Inada, K

Nakamura, T

Maeda, M

机构：

[1] Ind Technol Inst Yamaguchi Prefectural Govt, Ind Proc Dept, Yamaguchi 753, Japan

[2] Kyushu Inst Technol, Fac Engn, Dept Mat Sci & Engn, Kitakyushu, Fukuoka 804, Japan

[3] Univ Tokyo, Inst Ind Sci, Tokyo 106, Japan

来源：

JOURNAL OF THE JAPAN INSTITUTE OF METALS | 1998年 / 62卷 / 01期

关键词：

optical emission spectroscopy; mass spectrometry; activated reactive evaporation; titanium aluminum nitride; hard coating; oxidation;

D O I：

10.2320/jinstmet1952.62.1_98

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

Ti-Al-N films were deposited using an activated reactive evaporation (ARE) method with single vapor source of Ti-Al alloys. The behavior of some species excited and ionized in the plasma and a relationship between these reacting species and important operating parameters of ARE such as a probe voltage were investigated by optical emission spectroscopy(OES) and mass spectrometry(MS). The films were characterized by XRD, EPMA and AES. A high temperature oxidation of Ti-Al-N films were studied in air at temperatures from 600 to 1000 degrees C. The results were summarized as follows. (1) Each of emission lines from titanium, aluminum and nitrogen by OES could be detected without interferences. (2) Since TiN+ was observed by MS during TiN and Ti-Al-N film formation, TM was considered to be synthesized in the plasma. (3) The Ti/Al ratios of Ti-Al-N films analyzed by EPMA showed a good correlation to the Ti/Al ratios monitored by OES and MS respectively. (4) The resistivity to oxidation of Ti-Al-N films increased with increasing Al content in the films.

引用

页码：98 / 105

页数：8

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