Atomic Layer Deposition of Gd-Doped HfO2 Thin Films

被引：51

作者：

Adelmann, C. ^{[1
]}

Tielens, H. ^{[1
]}

Dewulf, D. ^{[2
,3
]}

Hardy, A. ^{[2
,3
]}

Pierreux, D. ^{[4
]}

Swerts, J. ^{[1
]}

Rosseel, E. ^{[1
]}

Shi, X. ^{[1
]}

Van Bael, M. K. ^{[2
,3
]}

Kittl, J. A. ^{[1
]}

Van Elshocht, S. ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Hasselt Univ, Inst Mat Res Inorgan & Phys Chem, B-3590 Diepenbeek, Belgium

[3] IMEC, Div IMOMEC, B-3590 Diepenbeek, Belgium

[4] ASM Belgium, B-3001 Louvain, Belgium

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2010年 / 157卷 / 04期

关键词：

annealing; atomic layer deposition; crystallisation; dielectric thin films; gadolinium; hafnium compounds; permittivity; thermal stability; HIGH-K DIELECTRICS; INTERFACIAL REACTIONS; GATE DIELECTRICS; OXIDES; GROWTH; SURFACES; SILICON;

D O I：

10.1149/1.3301663

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

GdxHf1-xOy thin films were deposited by atomic layer deposition (ALD) using tris(isopropyl-cyclopentadienyl) gadolinium [Gd((PrCp)-Pr-i)(3)] and HfCl4 in combination with H2O as an oxidizer. Growth curves showed a nearly ideal ALD behavior. The growth per individual Gd((PrCp)-Pr-i)(3)/H2O or HfCl4/H2O cycle was 0.55 A degrees, independent of the Gd/(Gd+Hf) composition x in the studied range. This indicates that the amount of HfO2 deposited during a HfCl4/H2O cycle was essentially identical to the amount of Gd2O3 deposited during a Gd((PrCp)-Pr-i)(3)/H2O cycle, assuming identical atomic densities of the films independent of composition. The crystallization of GdxHf1-xOy with Gd/(Gd+Hf) contents x between 7 and 30% was studied. Films with x greater than or similar to 10% crystallized into a cubic/tetragonal HfO2-like phase during spike or laser annealing up to 1300 degrees C, demonstrating that the cubic/tetragonal phase is thermally stable in this temperature range. A maximum dielectric constant of kappa similar to 36 was found for a Gd/(Gd+Hf) concentration of x similar to 11%.

引用

页码：G105 / G110

页数：6

共 35 条

[1] Dielectric properties of dysprosium- and scandium-doped hafnium dioxide thin films [J].