Quantum point contacts fabricated by nanoimprint lithography

被引：14

作者：

Martini, I ^{[1
]}

Eisert, D

Kamp, M

Worschech, L

Forchel, A

Koeth, J

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

[2] Nanoplus Nanosyst & Technol GmbH, D-97074 Wurzburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 14期

关键词：

D O I：

10.1063/1.1315343

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The potential of integrating nanoimprint lithography into electronic device fabrication is demonstrated by means of a quantum point contact (QPC). A Si-mold with a split-gate pattern is embossed into a thin polymer film located on top of a modulation-doped GaAs/AlGaAs heterostructure. The split-gates are fabricated by metal evaporation and lift-off. The gate tip separation ranges from 180 nm to 400 nm. Transport studies performed at a temperature of 4.2 K show conductance quantization with varying gate voltages. (C) 2000 American Institute of Physics. [S0003-6951(00)04940-8].

引用

页码：2237 / 2239

页数：3

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