Robust Block Copolymer Mask for Nanopatterning Polymer Films

被引:82
作者
Chao, Chia-Cheng [1 ]
Wang, Tzu-Chung [2 ]
Ho, Rong-Ming [1 ,2 ]
Georgopanos, Prokopios [3 ]
Avgeropoulos, Apostolos [3 ]
Thomas, Edwin L. [4 ]
机构
[1] Natl Tsing Hua Univ, Inst Nanoengn & Microsyst, Hsinchu 30013, Taiwan
[2] Natl Tsing Hua Univ, Dept Chem Engn, Hsinchu 30013, Taiwan
[3] Univ Ioannina, Dept Mat Sci & Engn, GR-45110 Ioannina, Greece
[4] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
关键词
assembly; thin films; nanostructures; porous materials; polymeric materials; THIN-FILMS; DIBLOCK COPOLYMER; LITHOGRAPHY; POLYSTYRENE; ARRAYS; ORIENTATION; TEMPLATES; POLYDIMETHYLSILOXANE; NANOLITHOGRAPHY; NANOSTRUCTURES;
D O I
10.1021/nn901370g
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The formation of well-oriented cylinders with perpendicular morphology for polystyrene-b-polydimethylsiloxane (PS-PDMS) thin films was achieved by spin coating. The self-assembled PS-PDMS nanostructured thin films were used as templates for nanopatterning; the PDMS blocks can be oxidized as silicon oxy carbide microdomains, whereas the PS blocks were degenerated by a simple oxygen plasma treatment for one-step oxidization. As a result, freestanding silicon oxy carbide thin films with hexagonally packed nanochannels were directly fabricated and used as masks for pattern transfer to underlying polymeric materials by oxygen reaction ion etching (RIE) to generate topographic nanopatterns. By taking advantage of robust property and high etching selectivity of the SiOC thin films under oxygen RIE, this nanoporous thin film can be used as an etch-resistant and reusable mask for pattern transfer to various polymeric materials. This approach demonstrates a simple, convenient, and cost-effective nanofabrication technique to create the topographic nanopatterns of polymeric materials.
引用
收藏
页码:2088 / 2094
页数:7
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