Ganpas solar cells lattice-matched to GaP

III-V semiconductors grown on silicon substrates are very attractive-for lower-cost, high-efficiency multi-junction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory. performance. GaNxP(1-x-y)As(y) is a direct-gap III-V alloy that can be grown lattice-matched to-Si when y = 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy With direct bandgaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss, the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.