SiGe HBT technology with fmax/fT=350/300 GHz and gate delay below 3.3 ps

被引：83

作者：

Khater, M ^{[1
]}

Rieh, JS ^{[1
]}

Adam, T ^{[1
]}

Chinthakindi, A ^{[1
]}

Johnson, J ^{[1
]}

Krishnasamy, R ^{[1
]}

Meghelli, M ^{[1
]}

Pagette, F ^{[1
]}

Sanderson, D ^{[1
]}

Schnabel, C ^{[1
]}

Schonenberg, KT ^{[1
]}

Smith, P ^{[1
]}

Stein, K ^{[1
]}

Stricker, A ^{[1
]}

Jeng, SJ ^{[1
]}

Ahlgren, D ^{[1
]}

Freeman, G ^{[1
]}

机构：

[1] IBM Microelect, Hopewell Jct, NY 12533 USA

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419122

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work reports on SiGe HBT technology with f(max) and f(T) of 350 GHz and 300 GHz, respectively, and a gate delay below 3.3 ps. This is the highest reported speed for any Si-based transistor in terms of combined performance of and f(T) both of which exhibit 300 GHz and above. Associated BVCEO and BVCBO are measured to be 1.7 V and 5.6 V, respectively. The dependence of device performance on bias condition and device dimension has been investigated. Considerations regarding the extraction of such high f(max) and f(T) values are also discussed.

引用

页码：247 / 250

页数：4

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