High-performance solar-blind photodetector using an Al0.6Ga0.4N n-type window layer

被引：23

作者：

Chowdhury, U ^{[1
]}

Wong, MM ^{[1
]}

Collins, CJ ^{[1
]}

Yang, B ^{[1
]}

Denyszyn, JC ^{[1
]}

Campbell, JC ^{[1
]}

Dupuis, RD ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 248卷

关键词：

doping; low-press; metalorganic vapor phase epitaxy; nitride; sapphire; semiconducting III-V materials; heterojunction semiconductor devices;

D O I：

10.1016/S0022-0248(02)01877-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this paper, we report a significant improvement in the external quantum efficiency (EQE) of AlGaN p i n solar-blind detectors (SBDs) by use of an n-type Al0.6Ga0.4N "window" layer. Under 0 V bias, an EQE of 58% at lambda = 274 nm (responsivity similar to0.13 A/W) was obtained without the use of an antireflection coating. The EQE was seen to depend on bias voltage. having a value of 64% oat -5 V reverse bias. The 0 V responsivity showed a sharp cut-off by one order of magnitude for a change in wavelength by 4 nm in both the longer and shorter wavelength side. This is the highest EQE reported from an SBD to date. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：552 / 555

页数：4

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