Quantitative imaging of sheet resistance with a scanning near-field microwave microscope

被引：100

作者：

Steinhauer, DE ^{[1
]}

Vlahacos, CP ^{[1
]}

Dutta, SK ^{[1
]}

Feenstra, BJ ^{[1
]}

Wellstood, FC ^{[1
]}

Anlage, SM ^{[1
]}

机构：

[1] Univ Maryland, Ctr Superconduct Res, Dept Phys, College Pk, MD 20742 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 07期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.120918

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe quantitative imaging of the sheet resistance of metallic thin films by monitoring frequency shift and quality factor in a resonant scanning near-held microwave microscope. This technique allows fast acquisition of images at approximately 10 ms per pixel over a frequency range from 0.1 to 50 GHz. In its current configuration, the system can resolve changes in sheet resistance as small as 0.6 Ohm/square for 100 Ohm/square films. We demonstrate its use at 7.5 GHz by generating a quantitative sheet resistance image of a YBa2Cu3O7-delta thin film on a 5 cm diam sapphire wafer. (C) 1998 American Institute of Physics.

引用

页码：861 / 863

页数：3

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