A low-threshold polarization-controlled vertical-cavity surface-emitting laser grown on GaAs (311)B substrate

被引：47

作者：

Mizutani, A ^{[1
]}

Hatori, N ^{[1
]}

Nishiyama, N ^{[1
]}

Koyama, F ^{[1
]}

Iga, K ^{[1
]}

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 05期

关键词：

GaAs (311)B substrate; polarization control; semiconductor lasers; surface-emitting lasers;

D O I：

10.1109/68.669216

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have demonstrated a GaAs (311)B vertical-cavity surface-emitting laser (VCSEL) with a threshold current as low as 250 mu A, which is the lowest value ever reported for that on non-(100) oriented substrates. Also, the fabricated VCSEL shows a stable polarization state for an wide during current ranges and a large polarization-mode suppression ratio over 30 dB between the [(2) over bar 33] and [01(1) over bar] axis modes at 5 mA. The electrical specific resistance of 1.2 x 10(-4) Omega.cm(-2) at the threshold was reasonably low due to carbon autodoping to AlAs in a p-type distributed Bragg reflector (DBR).

引用

页码：633 / 635

页数：3

共 14 条

[1]

Chu HY, 1997, IEEE PHOTONIC TECH L, V9, P1066, DOI 10.1109/68.605501

[2]

DOWD P, 1997, ELECT LETT, V33

[3] STRAIN AND CRYSTALLOGRAPHIC ORIENTATION EFFECTS ON INTERBAND OPTICAL MATRIX-ELEMENTS AND BAND-GAPS OF [11/]-ORIENTED III-V EPILAYERS [J].

HENDERSON, RH ;

TOWE, E .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (04) :2447-2455

[4] SURFACE EMITTING SEMICONDUCTOR-LASERS [J].

IGA, K ;

KOYAMA, F ;

KINOSHITA, S .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (09) :1845-1855

[5] INGAAS/GAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS ON (311)B GAAS SUBSTRATE [J].

KANEKO, Y ;

NAKAGAWA, S ;

TAKEUCHI, T ;

MARS, DE ;

YAMADA, N ;

MIKOSHIBA, N .

ELECTRONICS LETTERS, 1995, 31 (10) :805-806

[6] POLARIZATION INSTABILITY AND RELATIVE INTENSITY NOISE IN VERTICAL-CAVITY SURFACE-EMITTING LASERS [J].

KUKSENKOV, DV ;

TEMKIN, H ;

SWIRHUN, S .

APPLIED PHYSICS LETTERS, 1995, 67 (15) :2141-2143

[7] MOCVD grown InGaAs/GaAs vertical cavity surface emitting laser on GaAs (311)B substrate [J].

Mizutani, A ;

Hatori, N ;

Nishiyama, N ;

Koyama, F ;

Iga, K .

ELECTRONICS LETTERS, 1997, 33 (22) :1877-1878

[8] P-type AlAs growth on a GaAs (311)B substrate using carbon auto-doping for low resistance GaAs/AlAs distributed Bragg reflectors [J].

Mizutani, A ;

Hatori, N ;

Ohnoki, N ;

Nishiyama, N ;

Ohtake, N ;

Koyama, F ;

Iga, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (11) :6728-6729

[9]

MIZUTANI A, IN PRESS JPN J APPL

[10] EXCESS INTENSITY NOISE ORIGINATED FROM POLARIZATION FLUCTUATION IN VERTICAL-CAVITY SURFACE-EMITTING LASERS [J].

MUKAIHARA, T ;

OHNOKI, N ;

HAYASHI, Y ;

HATORI, N ;

KOYAMA, F ;

IGA, K .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (10) :1113-1115

← 1 2 →