X-ray photoelectron spectroscopy study of ZnO films grown by metal-organic chemical vapor deposition

被引：104

作者：

Zhang, YT ^{[1
]}

Du, GT ^{[1
]}

Wang, XQ ^{[1
]}

Li, WC ^{[1
]}

Yang, XT ^{[1
]}

Ma, Y ^{[1
]}

Zhao, BJ ^{[1
]}

Yang, HJ ^{[1
]}

Liu, DL ^{[1
]}

Yang, SR ^{[1
]}

机构：

[1] Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Changchun 130023, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 252卷 / 1-3期

基金：

中国国家自然科学基金;

关键词：

metalorganic molecular beam epitaxy; oxides; semiconducting II-VI materials;

D O I：

10.1016/S0022-0248(02)02481-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The ZnO films were deposited on (0 0 I)Si substrate by metal-organic chemical vapor deposition (MOCVD). Annealing was performed in air for 60 min at 800degreesC. The X-ray diffraction patterns of the samples showed sharp diffraction peaks for ZnO(0 0 2), which indicated that the films were highly c-axis oriented. Zn and O elements in the as-deposited ZnO film were investigated and compared with those in the annealed ZnO film by using X-ray Photoelectron Spectroscopy (XPS). XPS spectra showed that ZnO films changed from Zn-rich to O-rich after being annealed. (C) 2003 Elsevier Science B.V. All rights reserved.

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页码：180 / 183

页数：4

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