Factors limiting the composition window for fabrication of SiGe-on-insulator substrate by low-energy oxygen implantation

被引：6

作者：

Ishikawa, Y

Shibata, N

Fukatsu, S

机构：

[1] Japan Fine Ceram Ctr, Nagoya, Aichi 4568587, Japan

[2] Univ Tokyo, Dept Pure & Appl Sci, Meguro Ku, Tokyo 1538902, Japan

来源：

THIN SOLID FILMS | 2000年 / 369卷 / 1-2期

基金：

日本科学技术振兴机构;

关键词：

silicon; germanium; semiconductor-on-insulator; separation-by-implanted-oxygen;

D O I：

10.1016/S0040-6090(00)00809-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A composition window of x < 0.3 was found for which a good SiGe-on-insulator (SiGe-OI) substrate can be obtained by low-energy implantation of oxygen ions (25 keV O+) onto a pseudomorphic Si1-xGex/Si(001) alloy. Both the surface oxidation of SiGe during postimplant annealing and the thermally induced instability of SiGe alloys were found to be limiting factors influencing the composition window. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

收藏

页码：213 / 216

页数：4

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