Proposal of low-noise amplifier utilizing resonant tunneling transistors

被引：14

作者：

Ando, Y ^{[1
]}

Cappy, A

机构：

[1] NEC Corp Ltd, Kansai Elect Res Labs, Otsu, Shiga 520, Japan

[2] Inst Elect & Microelect Nord, F-59652 Villeneuve Dascq, France

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 01期

关键词：

low-noise amplifier; RTD; RTT;

D O I：

10.1109/16.658808

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low-noise amplifier utilizing the negative input resistance of resonant tunneling transistors (RTT's) is proposed, Expected features of the RTT amplifiers are: 1) negligible effect of noise sources at the output, owing to their large power gain; 2) Rat variation of noise figure (NF) versus frequency, due to white spectra of noise sources at the input; and 3) a high maximum oscillation frequency (f(max)) (over several 100 GHz). Based on simulated DC characteristics, over 500 GHz f(max) and 0.3 dB NF at 100 GHz are predicted for optimized AlGaAs/GaAs/AlGaAs resonant tunneling diodes (RTD's), In an RTT formed by coupling an FET to an optimized RTD, 0.55 dB minimum noise figure and 26 dB associated gain are predicted at 100 GHz. Also, a 1/omega(2) spectrum of the input noise resistance is predicted at low frequencies.

引用

页码：31 / 35

页数：5

共 15 条

[1] CALCULATION OF TRANSMISSION TUNNELING CURRENT ACROSS ARBITRARY POTENTIAL BARRIERS [J].

ANDO, Y ;

ITOH, T .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) :1497-1502

[2] FREQUENCY MULTIPLICATION USING RESONANT TUNNELING DIODE WITH OUTPUT AT SUBMILLIMETER WAVELENGTHS [J].

BOUREGBA, R ;

LIPPENS, D ;

PALMATEER, L ;

BOCKENHOFF, E ;

BOGEY, M ;

DESTOMBES, JL ;

LECLUSE, A .

ELECTRONICS LETTERS, 1990, 26 (21) :1804-1806

[3] OSCILLATIONS UP TO 712 GHZ IN INAS/ALSB RESONANT-TUNNELING DIODES [J].

BROWN, ER ;

SODERSTROM, JR ;

PARKER, CD ;

MAHONEY, LJ ;

MOLVAR, KM ;

MCGILL, TC .

APPLIED PHYSICS LETTERS, 1991, 58 (20) :2291-2293

[4] QUANTUM-WELL RESONANT TUNNELING BIPOLAR-TRANSISTOR OPERATING AT ROOM-TEMPERATURE [J].

CAPASSO, F ;

SEN, S ;

GOSSARD, AC ;

HUTCHINSON, AL ;

ENGLISH, JH .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (10) :573-576

[5] NOVEL CURRENT-VOLTAGE CHARACTERISTICS IN AN INP-BASED RESONANT-TUNNELING HIGH-ELECTRON-MOBILITY TRANSISTOR [J].

CHEN, KJ ;

MAEZAWA, K ;

YAMAMOTO, M .

APPLIED PHYSICS LETTERS, 1995, 67 (24) :3608-3610

[6] EFFICIENT METHOD FOR COMPUTER-AIDED NOISE-ANALYSIS OF LINEAR-AMPLIFIER NETWORKS [J].

HILLBRAND, H ;

RUSSER, PH .

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS, 1976, 23 (04) :235-238

[7]

OKOYAMA N, 1985, JPN J APPL PHYS, V24, pL853

[8] THE RESONANT-TUNNELING FIELD-EFFECT TRANSISTOR - A NEW NEGATIVE TRANSCONDUCTANCE DEVICE [J].

SEN, S ;

CAPASSO, F ;

BELTRAM, F ;

CHO, AY .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (08) :1768-1773

[9] 0.1-MU-M SCHOTTKY-COLLECTOR ALAS/GAAS RESONANT-TUNNELING DIODES [J].

SMITH, RP ;

ALLEN, ST ;

REDDY, M ;

MARTIN, SC ;

LIU, J ;

MULLER, RE ;

RODWELL, MJW .

IEEE ELECTRON DEVICE LETTERS, 1994, 15 (08) :295-297

[10] RESONANT TUNNELING THROUGH QUANTUM WELLS AT FREQUENCIES UP TO 2.5 THZ [J].

SOLLNER, TCLG ;

GOODHUE, WD ;

TANNENWALD, PE ;

PARKER, CD ;

PECK, DD .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :588-590

← 1 2 →