Vacancy-indium clusters in implanted germanium

被引：15

作者：

Chroneos, A. ^{[2
]}

Kube, R. ^{[3
]}

Bracht, H. ^{[3
]}

Grimes, R. W. ^{[2
]}

Schwingenschloegl, U. ^{[1
]}

机构：

[1] KAUST, PSE Div, Thuwal 239556900, Saudi Arabia

[2] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2BP, England

[3] Univ Munster, Inst Mat Phys, D-48149 Munster, Germany

来源：

CHEMICAL PHYSICS LETTERS | 2010年 / 490卷 / 1-3期

关键词：

DIFFUSION; MOBILITY; ENERGY;

D O I：

10.1016/j.cplett.2010.03.005

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：38 / 40

页数：3

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