NiO Resistive Random Access Memory Nanocapacitor Array on Graphene

被引：170

作者：

Son, Jong Yeog ^{[2
,3
]}

Shin, Young-Han ^{[1
]}

Kim, Hyungjun ^{[4
]}

Jang, Hyun M. ^{[2
,3
,5
]}

机构：

[1] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea

[2] Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 790784, South Korea

[3] Pohang Univ Sci & Technol POSTECH, Div Adv Mat Sci, Pohang 790784, South Korea

[4] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea

[5] Pohang Univ Sci & Technol POSTECH, Dept Phys, Pohang 790784, South Korea

来源：

ACS NANO | 2010年 / 4卷 / 05期

关键词：

resistive switching; NiO; nanocapacitor; graphene; anodizing aluminum oxide; NONVOLATILE MEMORY; HIGH-DENSITY; OXIDE; NANOSTRUCTURES; SRTIO3; FILMS; ANODIZATION; FABRICATION; SWITCH;

D O I：

10.1021/nn100234x

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this study, a NiO RRAM nanocapacitor array was fabricated on a graphene sheet, which was on a Nb-doped SrTiO3 substrate containing terraces with a regular interval of about 100 nm and an atomically smooth surface. For the formation of the NiO RRAM nanocapacitor (Pt/NiO/graphene capacitor) array, an anodic aluminum oxide (AAO) nanotemplate with a pore diameter of about 30 nm and an interpore distance of about 100 nm was used. NiO and Pt were subsequently deposited on the graphene sheet. The NiO RRAM nanocapacitor had a diameter of about 30 +/- 2 nm and a thickness of about 33 +/- 3 nm. Typical unipolar switching characteristics of the NiO RRAM nanocapacitor array were confirmed. The NiO RRAM nanocapacitor array on graphene exhibited lower SET and RESET voltages than that on a bare surface of Nb-doped SrTiO3.

引用

页码：2655 / 2658

页数：4

共 34 条

[1] Current switching of resistive states in magnetoresistive manganites [J].