Dielectric and piezoelectric properties of lead-free (Bi,Na)TiO3-based thin films

被引：102

作者：

Abazari, M. ^{[1
]}

Safari, A. ^{[1
]}

Bharadwaja, S. S. N. ^{[2
]}

Trolier-McKinstry, S. ^{[2
]}

机构：

[1] Rutgers State Univ, Dept Mat Sci & Engn, Glenn Howatt Electroceram Labs, Piscataway, NJ 08854 USA

[2] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 08期

关键词：

barium compounds; bismuth compounds; dielectric hysteresis; dielectric losses; dielectric polarisation; epitaxial growth; ferroelectric thin films; permittivity; piezoelectric thin films; potassium compounds; sodium compounds; PHASE-TRANSITION TEMPERATURES; PULSED-LASER DEPOSITION; FERROELECTRIC PROPERTIES; CERAMICS; COEFFICIENT;

D O I：

10.1063/1.3309706

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dielectric and piezoelectric properties of morphotropic phase boundary (Bi,Na)TiO3-(Bi,K)TiO3-BaTiO3 epitaxial thin films deposited on SrRuO3 coated SrTiO3 substrates were reported. Thin films of 350 nm thickness exhibited small signal dielectric permittivity and loss tangent values of 750 and 0.15, respectively, at 1 kHz. Ferroelectric hysteresis measurements indicated a remanent polarization value of 30 mu C/cm(2) with a coercive field of 85-100 kV/cm. The thin film transverse piezoelectric coefficient (e(31,f)) of these films after poling at 600 kV/cm was found to be -2.2 C/m(2). The results indicate that these BNT-based thin films are a potential candidate for lead-free piezoelectric devices.

引用

页数：3

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