4.0-inch Active-Matrix Organic Light-Emitting Diode Display Integrated with Driver Circuits Using Amorphous In-Ga-Zn-Oxide Thin-Film Transistors with Suppressed Variation

被引：47

作者：

Ohara, Hiroki ^{[1
]}

Sasaki, Toshinari ^{[1
]}

Noda, Kousei ^{[1
]}

Ito, Shunichi ^{[1
]}

Sasaki, Miyuki ^{[1
]}

Endo, Yuta ^{[1
]}

Yoshitomi, Shuhei ^{[1
]}

Sakata, Junichiro ^{[1
]}

Serikawa, Tadashi ^{[1
]}

Yamazaki, Shunpei ^{[1
]}

机构：

[1] Semicond Energy Lab Co Ltd, Kanagawa 2430036, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 03期

关键词：

HOMOLOGOUS COMPOUNDS; PAPER;

D O I：

10.1143/JJAP.49.03CD02

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have newly developed a 4.0-in. quarter video graphics array (QVGA) active-matrix organic light-emitting diode (AMOLED) display integrated with gate and source driver circuits using amorphous In-Ga-Zn-oxide (IGZO) thin-film transistors (TFTs). Focusing on a passivation layer in an inverted staggered bottom gate structure, the threshold voltage of the TFTs can be controlled to have "normally-off'' characteristics with suppressed variation by using a SiOx layer formed by sputtering with a low hydrogen content. In addition, small subthreshold swing S/S of 0.19 V/decade, high field-effect mobility mu(FE) of 11.5 cm(2) V-1 s(-1), and threshold voltage V-th of 1.27 V are achieved. The deposition conditions of the passivation layer and other processes are optimized, and variation in TFT characteristics is suppressed, whereby high-speed operation in gate and source driver circuits can be achieved. Using these driver circuits, the 4.0-in. QVGA AMOLED display integrated with driver circuits can be realized. (C) 2010 The Japan Society of Applied Physics

引用

页数：6

共 21 条

[1] Amorphous In-Ga-Zn-O Thin Film Transistor Current-Scaling Pixel Electrode Circuit for Active-Matrix Organic Light-Emitting Displays [J].