Evolution of the current-voltage characteristics of photoluminescing porous silicon during chemical etching

被引：4

作者：

Gorbach, TY ^{[1
]}

Svechnikov, SV

Smertenko, PS

Tul'chinskii, PG

Bondarenko, AV

Volchek, SA

Dorofeev, AM

Masini, G

Maiello, G

La Monica, S

Ferrari, A

机构：

[1] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-252650 Kiev, Ukraine

[2] Belorussian State Univ Informat Technol & Radio E, Minsk 220027, BELARUS

[3] Univ Roma La Sapienza, Dipartimento Ingn Elettr, I-00184 Rome, Italy

来源：

SEMICONDUCTORS | 1997年 / 31卷 / 12期

关键词：

Silicon; Recombination; High Surface; Magnetic Material; Large Change;

D O I：

10.1134/1.1187297

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

It has been established that chemical etching of porous silicon in HF results in a large change in the current-voltage characteristics and photoluminescence parameters of the silicon. The results of the investigation can be used to increase the efficiency of electroluminescence structures In-(porous Si)-Al by increasing the injection level of minority carriers and realizing a regime of double injection and high surface recombination rate near the surface of porous silicon. (C) 1997 American Institute of Physics. [S1063-7826(97)00511-5].

引用

页码：1221 / 1224

页数：4

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