Structural, electrical, and optical properties of transparent conductive ZnO:Ga films prepared by DC reactive magnetron sputtering

被引：152

作者：

Ma, Quan-Bao ^{[1
]}

Ye, Zhi-Zhen ^{[1
]}

He, Hal-Ping ^{[1
]}

Hu, Shao-Hua ^{[1
]}

Wang, Jing-Rul ^{[1
]}

Zhu, Li-Ping ^{[1
]}

Zhang, Yin-Zhu ^{[1
]}

Zhao, Bing-Hui ^{[1
]}

机构：

[1] Zhejiang Univ, Dept Mat, State Key Lab Sil Mat, Hangzhou 310027, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 304卷 / 01期

基金：

中国国家自然科学基金;

关键词：

crystal structure; magnetron sputtering; ZnO : Ga films; transparent conductive oxide; electrical and optical properties; semiconducting II-VI materials;

D O I：

10.1016/j.jcrysgro.2007.01.037

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Transparent conductive Ga-doped zinc oxide (ZnO:Ga) films with highly (0 0 2)-preferred orientation were deposited on glass substrates by DC reactive magnetron sputtering. Variation of structural, electrical, and optical properties with Ga content was investigated. The peak position of the (0 0 2) plane is linearly shifted to the lower 2 theta value with the increase of Ga content. The lowest resistivity of the ZnO:Ga films is 3.51 X 10(-4) Omega cm and the average transmittance of the films is over 90% in the visible range. The optical band gap of the films is in the range of 3.58-3.74 eV. The optimum growth condition was obtained by using the Zn-Ga alloy target of 3.0 at% Ga content. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：64 / 68

页数：5

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