Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress

被引：122

作者：

Chen, Yu-Chun ^{[1
]}

Chang, Ting-Chang ^{[1
,2
]}

Li, Hung-Wei ^{[3
]}

Chen, Shih-Ching ^{[1
]}

Lu, Jin ^{[1
]}

Chung, Wan-Fang ^{[5
]}

Tai, Ya-Hsiang ^{[4
]}

Tseng, Tseung-Yuen ^{[5
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[2] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 804, Taiwan

[3] Natl Chiao Tung Univ, Dept Photon, Inst Electroopt Engn, Hsinchu 300, Taiwan

[4] Natl Chiao Tung Univ, Display Inst, Dept Photon, Hsinchu 300, Taiwan

[5] Natl Chiao Tung Univ, Inst Elect, Dept Elect Engn, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 26期

关键词：

adsorption; semiconductor thin films; thin film transistors; tin compounds; zinc compounds;

D O I：

10.1063/1.3457996

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This study investigates the effects of bias-induced oxygen adsorption on the electrical characteristic instability of zinc tin oxide thin film transistors in different ambient oxygen partial pressures. When oxygen pressure is largest, the threshold voltages showed the quickest increase but the slowest recovery during the stress phase and recovery phase, respectively. This finding corresponds to the charge trapping time constant and recovery time constant, which are extracted by fitting the stretched-exponential equation and which exhibit a relationship with oxygen pressure. We suggest that the gate bias reduces the activation energy of oxygen adsorption during gate bias stress. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3457996]

引用

页数：3

共 17 条

[1] A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid [J].

Chen, Min-Chen ;

Chang, Ting-Chang ;

Huang, Sheng-Yao ;

Chang, Kuan-Chang ;

Li, Hung-Wei ;

Chen, Shih-Ching ;

Lu, Jin ;

Shi, Yi .

APPLIED PHYSICS LETTERS, 2009, 94 (16)

[2]

Chiang S.-C., 2008, TAIW DISPL C, pB106

[3] Charge trapping and detrapping characteristics in amorphous InGaZnO TFTs under static and dynamic stresses [J].

Cho, In-Tak ;

Lee, Jeong-Min ;

Lee, Jong-Ho ;

Kwon, Hyuck-In .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (01)

[4] Investigating the stability of zinc oxide thin film transistors [J].

Cross, R. B. M. ;

De Souza, M. M. .

APPLIED PHYSICS LETTERS, 2006, 89 (26)

[5] CHEMISORPTION OF OXYGEN ON ZINC OXIDE - EFFECT OF A DC ELECTRIC FIELD [J].

HOENIG, SA ;

LANE, JR .

SURFACE SCIENCE, 1968, 11 (02) :163-&

[6] Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application [J].

Hosono, Hideo .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) :851-858

[7] Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors [J].

Jeong, Jae Kyeong ;

Yang, Hui Won ;

Jeong, Jong Han ;

Mo, Yeon-Gon ;

Kim, Hye Dong .

APPLIED PHYSICS LETTERS, 2008, 93 (12)

[8] Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules [J].

Kang, Donghun ;

Lim, Hyuck ;

Kim, Changjung ;

Song, Ihun ;

Park, Jaechoel ;

Park, Youngsoo ;

Chung, JaeGwan .

APPLIED PHYSICS LETTERS, 2007, 90 (19)

[9] Inkjet-printed InGaZnO thin film transistor [J].

Kim, Gun Hee ;

Kim, Hyun Soo ;

Shin, Hyun Soo ;

Ahn, Byun Du ;

Kim, Kyung Ho ;

Kim, Hyun Jae .

THIN SOLID FILMS, 2009, 517 (14) :4007-4010

[10]

KIM HB, 2009, APPL PHYS LETT, V94

← 1 2 →