Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures

被引：35

作者：

Park, M

Cuomo, JJ

Rodriguez, BJ

Yang, WC

Nemanich, RJ

Ambacher, O

机构：

[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[2] N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA

[3] Tech Univ Ilmenau, Ctr Micro & Nanotechnol, D-98693 Ilmenau, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 12期

关键词：

D O I：

10.1063/1.1570507

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic properties of inversion domains in a GaN-based lateral polarity heterostructure were investigated using micro-Raman spectroscopy. The piezoelectric polarization of each domain was calculated from strain determined via Raman scattering. The free carrier concentration and electron mobility were deduced from the longitudinal optical phonon-plasmon coupled mode. The electron concentration in the N-face domain was slightly higher than that in the Ga-face domain. It appears that during growth, a larger number of donor impurities may have been incorporated into the N-face domain than into the Ga-face domain. (C) 2003 American Institute of Physics.

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页码：9542 / 9547

页数：6

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