Optimum carrier distribution of the IGBT

被引：42

作者：

Sheng, K ^{[1
]}

Udrea, F ^{[1
]}

Amaratunga, GAJ ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB1 1PZ, England

来源：

SOLID-STATE ELECTRONICS | 2000年 / 44卷 / 09期

关键词：

IGBT; optimum; carrier; model;

D O I：

10.1016/S0038-1101(00)00103-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, an analytical model is developed to optimize the charge profile in an IGBT for the trade-off between the on-state performance and turn-off losses. It is found that, in contrast to a typical IGBT design, the optimum carrier distribution has a significantly higher carrier concentration at the cathode end of the device than that at the anode end. The results, which are supported by 2-D numerical simulations and experiments, provide an interesting guideline for optimizing the IGBT. Practical considerations of the predicted optimum design are discussed. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：1573 / 1583

页数：11

共 33 条

[1]

Akiyama H., 1990, Proceedings of the 2nd International Symposium on Power Semiconductor Devices and ICs. ISPSD '90 (Cat. No.90TH0304-6), P131, DOI 10.1109/ISPSD.1990.991073

[2]

AKIYAMA H, 1991, PROCEEDINGS OF THE 3RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, P187, DOI 10.1109/ISPSD.1991.146095

[3]

BHALLA A, 1999, P 11 ISPSD TOR ON CA, P41

[4] NPT-IGBT - Optimizing for manufacturability [J].

Burns, D ;

Deram, I ;

Mello, J ;

Morgan, J ;

Wan, I ;

Robb, F .

ISPSD '96 - 8TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, PROCEEDINGS, 1996, :331-334

[5] Advanced lifetime control for reducing turn-off switching losses of 4.5 kV IEGT devices [J].

Eicher, S ;

Ogura, T ;

Sugiyama, K ;

Ninomiya, H ;

Ohashi, H .

ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 1998, :39-42

[6] Punchthrough type GTO with buffer layer and homogeneous low efficiency anode structure [J].

Eicher, S ;

Bauer, F ;

Weber, A ;

Zeller, HR ;

Fichtner, W .

ISPSD '96 - 8TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, PROCEEDINGS, 1996, :261-264

[7]

Hefner AR, 1987, IEEE T POWER ELECTR, V2, P194, DOI [10.1109/TPEL.1987.4766360, 10.1109/TPEL.1987.4766347]

[8] AN ANALYTICAL MODEL FOR THE STEADY-STATE AND TRANSIENT CHARACTERISTICS OF THE POWER INSULATED-GATE BIPOLAR-TRANSISTOR [J].

HEFNER, AR ;

BLACKBURN, DL .

SOLID-STATE ELECTRONICS, 1988, 31 (10) :1513-1532

[9]

HOTZ R, 1995, ISPSD '95 - PROCEEDINGS OF THE 7TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, P224

[10] The 4500V-750A planar gate press pack IEGT [J].

Kon, H ;

Nakayama, K ;

Yanagisawa, S ;

Miwa, J ;

Uetake, Y .

ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 1998, :81-84

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