Infrared and Raman spectroscopy of particle-beam induced damage of silicon carbide

被引：24

作者：

Hobert, H ^{[1
]}

Dunken, H ^{[1
]}

Menzel, R ^{[1
]}

Bachmann, T ^{[1
]}

Wesch, W ^{[1
]}

机构：

[1] UNIV JENA,INST SOLID STATE PHYS,D-07743 JENA,GERMANY

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1997年 / 220卷 / 2-3期

关键词：

D O I：

10.1016/S0022-3093(97)00305-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The damaging of 6H-SiC by ion implantation (Ar+, 320 keV) leads to the formation of a light-absorbing surface layer with a thickness of about 0.4 mu m and a dielectric function which indicates a disordering of the crystal structure. Raman spectra show the existence of amorphous carbon, silicon and silicon carbide. Ion bombardment with 1.4 MeV He+ ions generates a 3 mu m thick surface layer with small lattice distortions and light-absorbing centers and a 0.4 mu m thick interface layer with a larger refractive index. (C) 1997 Elsevier Science B.V.

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页码：187 / 194

页数：8

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