Relaxation model of coherent island formation in heteroepitaxial thin films

被引:34
作者
Budiman, RA [1 ]
Ruda, HE [1 ]
机构
[1] Univ Toronto, Energenius Ctr Adv Nanotechnol, Toronto, ON M5S 3E3, Canada
关键词
D O I
10.1063/1.1311305
中图分类号
O59 [应用物理学];
学科分类号
摘要
A model for coherent island formation in heteroepitaxial thin films is presented by focusing on the interplay between surface and strain relaxation energies. The resulting free energy is mapped onto the Landau free energy, and yields the local surface slope as the order parameter for island formation. Isotropic islands are found to exhibit second-order transitions. We argue that our model is appropriate for describing the nucleation and stability of island formation. The spinodal curve indicates that there exists an unstable regime where spinodal-like islands emerge as low-slope islands, even in a highly mismatched heteroepitaxial system. (C) 2000 American Institute of Physics. [S0021- 8979(00)00521-1].
引用
收藏
页码:4586 / 4594
页数:9
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