The behavior of As precipitates in low-temperature-grown GaAs

被引：18

作者：

Bourgoin, JC

Khirouni, K

Stellmacher, M

机构：

[1] Univ Paris 07, CNRS, Phys Solides Grp, F-75251 Paris 05, France

[2] Fac Sci Monastir, Semicond Lab, Monastir 5000, Tunisia

[3] Thomson CSF, Cent Rech Lab, F-91404 Orsay, France

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 04期

关键词：

D O I：

10.1063/1.120781

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We analyze the kinetics associated with the concentration and the growth of As precipitates during annealing in low-temperature-grown GaAs layers. We correlate them with that associated with the annealing of the As antisite related defect. This allows us to deduce that all those kinetics are governed by the mobility of the As interstitial whose migration energy is 0.44 eV. (C) 1998 American Institute of Physics.

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页码：442 / 444

页数：3

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