The preparation of highly oriented InSe films by electrodeposition

In-Se films were deposited from a mixture of indium chloride and selenium oxide in aqueous solution by electrodeposition on titanium-coated glass substrates and were crystallized by annealing. The effects of the parameters during deposition, such as current density, deposition potential versus saturated calomel electrode, acidity and concentration of source materials, and annealing conditions were studied. The crystal structure, surface morphology, and the composition of the films were studied by X-ray diffraction using the CuK alpha line, scanning electron microscopy, and wavelength dispersive X-ray spectroscopy, respectively. As a result, we found that highly (001)-oriented InSe films could be prepared by electrodeposition of In-Se films with indium contents of about 50 at% followed by annealing in an Ar atmosphere at 400 degrees C for 30 min.