Growth of N-doped p-type ZnO films using ammonia as dopant source gas

被引：40

作者：

Huang, JY ^{[1
]}

Ye, ZZ ^{[1
]}

Chen, HH ^{[1
]}

Zhao, BH ^{[1
]}

Wang, L ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 2003年 / 22卷 / 04期

关键词：

D O I：

10.1023/A:1022347910122

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Methods to fabricate p-type ZnO film using ammonia as the dopant source was reported to enhance the N-doped concentration by the N-H atom pair. The p-type N-doped ZnO films with highly c-axis orientation were grown on silicon or sapphire substrates. The hole carrier concentrations of the p-type ZnO films grown at 450°C increased from 1.14×1014 to 8.02×1018 cm-3.

引用

页码：249 / 251

页数：3

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