Self-organized quantum dot formation by ion sputtering

Key requirements for the fabrication of semiconductor quantum dots (QD) are their size, size distribution and density. Beyond conventional lithography methods self-organization processes are promising for the realization of QDs. We present a new route for the generation of quantum dots, which in contrast to epitaxial growth is a subtractive self-organized and self-ordered method. It is based on a surface instability induced by low energy and normal incidence ion bombardment of semiconductor surfaces. Uniform crystalline islands with dimensions as small as 15 nm and densities up to 10(11) cm(-2) are formed by a cooperative process on the surface of semiconductors during continuous ion sputtering.