Hydrogen-induced thermal interface degradation in (111) Si/SiO2 revealed by electron-spin resonance

被引：44

作者：

Stesmans, A ^{[1
]}

Afanas'ev, VV ^{[1
]}

机构：

[1] Univ Louvain, Dept Phys, B-3001 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 18期

关键词：

D O I：

10.1063/1.121335

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron-spin resonance (ESR) experiments show that the interface degradation induced in thermal (111) Si/SiO2 by postoxidation annealing (POA) in vacuum-previously isolated by ESR as a permanent creation of P-b (degrees Si equivalent to Si-3) interface defects-is strongly enhanced (similar to 6 times) when performed in H-2 ambient. It, thus, appears that the H-2 POA step, standardly applied to passivate interface states (preexisting P(b)s) naturally introduced during oxidation, effectively creates additional defect entities; the process initiates from similar to 550 degrees C onward vis-a-vis similar to 640 degrees C for vacuum. The results unveil the atomic nature of one of the mechanisms of the electrically long-known ii-induced POA generation of adverse interface states. (C) 1998 American Institute of Physics.

引用

页码：2271 / 2273

页数：3

共 18 条

[11] THE ROLE OF HYDROGEN IN RADIATION-INDUCED DEFECT FORMATION IN POLYSILICON GATE MOS DEVICES [J].

SCHWANK, JR ;

FLEETWOOD, DM ;

WINOKUR, PS ;

DRESSENDORFER, PV ;

TURPIN, DC ;

SANDERS, DT .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) :1152-1158

[12]

Stesmans A, 1996, APPL PHYS LETT, V68, P2723, DOI 10.1063/1.115577

[13] OBSERVATION OF DIPOLAR INTERACTIONS BETWEEN PB0 DEFECTS AT THE (111) SI/SIO2 INTERFACE [J].

STESMANS, A ;

VANGORP, G .

PHYSICAL REVIEW B, 1990, 42 (06) :3765-3768

[14] STRUCTURAL RELAXATION OF PB DEFECTS AT THE (111)SI/SIO2 INTERFACE AS A FUNCTION OF OXIDATION TEMPERATURE - THE PB-GENERATION-STRESS RELATIONSHIP [J].

STESMANS, A .

PHYSICAL REVIEW B, 1993, 48 (04) :2418-2435

[15] Passivation of P-b0 and P-b1 interface defects in thermal (100) Si/SiO2 with molecular hydrogen [J].

Stesmans, A .

APPLIED PHYSICS LETTERS, 1996, 68 (15) :2076-2078

[16]

STESMANS A, 1996, PHYS REV B, V54

[17] DIPOLAR INTERACTION BETWEEN [111] PB DEFECTS AT THE (111)SI/SIO2 INTERFACE REVEALED BY ELECTRON-SPIN-RESONANCE [J].

VANGORP, G ;

STESMANS, A .

PHYSICAL REVIEW B, 1992, 45 (08) :4344-4371

[18] NITROGEN-SILICON REACTION AND ITS INFLUENCE ON DIELECTRIC STRENGTH OF THERMAL SILICON DIOXIDE [J].

VROMEN, BH .

APPLIED PHYSICS LETTERS, 1975, 27 (03) :152-154

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