OBSERVATION OF DIPOLAR INTERACTIONS BETWEEN PB0 DEFECTS AT THE (111) SI/SIO2 INTERFACE

被引：30

作者：

STESMANS, A

VANGORP, G

机构：

[1] Departement Natuurkunde, Katholieke Universiteit Leuven

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.42.3765

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Dipole-dopole (DD) interactions between Pb0 (Si?Si3) defects at the two-dimensional (2D) (111) Si/SiO2 interface are revealed by electron-spin resonance. A DD fine-structure doublet develops with increasing [Pb0] resulting in a line shape characteristic of DD interactions within a 2D dilute spin system, for which the observations are of fundamental interest. The residual line shape, devoid of DD effects, has been deduced. It is shown that a DD line broadening previously calculated for Pb0 is too small, thus questioning the assumed random-distribution model. © 1990 The American Physical Society.

引用

页码：3765 / 3768

页数：4

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