HgCdTe heteroepitaxy on three-inch (112) CdZnTe/Si: Ellipsometric control of substrate temperature

被引：13

作者：

Almeida, LA ^{[1
]}

Dhar, NK

Martinka, M

Dinan, JH

机构：

[1] E OIR Measurements Inc, Spotsylvania, VA 22553 USA

[2] Night Vis & Elect Sensors Directorate, Ft Belvoir, VA USA

[3] USA, Res Lab, Washington, DC USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2000年 / 29卷 / 06期

关键词：

spectroscopic ellipsometry; temperature control; HgCdTe; Si substrates; molecular beam epitaxy;

D O I：

10.1007/s11664-000-0220-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The technique of spectroscopic ellipsometry (SE) has been utilized to monitor in real-time and precisely control the surface temperature of Hg1-xCdxTe during molecular beam epitaxy. Due to the temperature dependence of the Hg sticking coefficient under Hg-deficient growth conditions, the near-surface composition of an epilayer is extremely sensitive to surface temperature. SE data were acquired in real time and modeled using a previously established library of dielectric functions of Hg1-xCdxTe as a function of composition. Utilizing SE-generated compositional profiles as a guide, substrate heating power was adjusted in such a way as to minimize composition transients. To demonstrate the effectiveness of the technique, we have used SE to control the temperature of HgCdTe epilayer surfaces during deposition on three-inch (211)CZnTe/ZnTe/Si composite substrates mounted on indium free holders.

引用

页码：754 / 759

页数：6

共 9 条

[1] Automated compositional control of Hg1-xCdxTe during MBE, using in situ spectroscopic ellipsometry [J].