The effect of alloy scattering on the mobility of holes in a Si1-xGex quantum well

被引：66

作者：

Kearney, MJ ^{[1
]}

Horrell, AI ^{[1
]}

机构：

[1] Loughborough Univ Technol, Dept Elect & Elect Engn, Loughborough LE11 3TU, Leics, England

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1998年 / 13卷 / 02期

关键词：

D O I：

10.1088/0268-1242/13/2/003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of alloy scattering on the mobility of holes in a Si1-xGex quantum well is considered from a theoretical perspective. Issues relating to the definition and value of the alloy potential are discussed, and results are presented showing how the alloy scattering component of the overall mobility varies with temperature, carrier density and alloy concentration. Screening is allowed for and found to be important at low temperatures. By considering other scattering mechanisms such as interface impurities, surface roughness and acoustic phonons, we argue that alloy scattering is not a significant limiting factor as regards device applications, contrary to recent claims.

引用

页码：174 / 180

页数：7

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