High-resolution x-ray diffractometry and x-ray reflectometry techniques for structural studies of complicated thin-layered heterostructures: Complementarity between Fourier transform-based procedures and simulation softwares

被引:3
作者
Durand, O [1 ]
De Rossi, A [1 ]
Bouchier, A [1 ]
机构
[1] Thales Res & Technol France, F-91404 Orsay, France
来源
JOURNAL DE PHYSIQUE IV | 2004年 / 118卷
关键词
x-ray reflectometry; high-resolution x-ray diffractometry; semi-conductor heterostructures; thickness determination; Fourier transform; interfacial segregation profiles;
D O I
10.1051/jp4:2004118024
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Both x-ray reflectometry and high-resolution x-ray diffractometry techniques are used for the assessment of individual layer thicknesses and interfacial profiles inside complicated heterostructures, such as semi-conductor multilayers. In particular, the use of Fourier transform-based numerical treatments applied to both the reflectivity curves and the high-resolution diffraction profiles allows a fast and precise determination of the individual layer thicknesses. Moreover, we show the potentiality of this method by reporting x-ray reflectometry and diffractometry studies on waveguides structures and superlattices. Typical layer thicknesses from 0.5 nm to more than 1 mum are accessible with these methods. We show the complementarity of both x-ray reflectometry and high-resolution diffraction techniques. Finally, the reliability of using a simulation software for the assessment of complicated interfacial roughness, such as segregation profiles, is reported.
引用
收藏
页码:203 / 211
页数:9
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