Calculation of energy deposition in thin resist films over multilayer substrates

被引:5
作者
Raptis, I [1 ]
Glezos, N
Rosenbusch, A
Patsis, G
Argitis, P
机构
[1] NCSR Demokritos, Inst Microelect, Ag Paraskevi Attikis 15310, Greece
[2] Sigma C GMBH, D-81737 Muenchen, Germany
关键词
D O I
10.1016/S0167-9317(98)00038-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Multilayer substrates are of great importance for direct write applications. Recently, they are getting more and more importance in mask making as well, for example in the phase shift technology. In the case of direct writing, the substrate consists of various layers of different materials while for mask fabrication, the mask plate consists of at least two different layers, e.g. Cr on glass. A new method for the calculation of energy deposition due to e-beam exposure in thin resist films over composite substrates is presented. The method is based on the solution of the Boltzmann transport equation and has proven to be very fast compared to Monte Carlo method, and its accuracy has been shown by successful comparison with experimental obtained results. The method is incorporated in a complete e-beam lithography simulator.
引用
收藏
页码:171 / 174
页数:4
相关论文
共 11 条
[1]   SUBSTRATE THICKNESS CONSIDERATIONS IN ELECTRON-BEAM LITHOGRAPHY [J].
ADESIDA, I ;
EVERHART, TE .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) :5994-6005
[2]   A fast electron beam lithography simulator based on the boltzmann transport equation [J].
Glezos, N ;
Raptis, I .
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1996, 15 (01) :92-102
[3]   LITHOS - A FAST-ELECTRON BEAM LITHOGRAPHY SIMULATOR [J].
GLEZOS, N ;
RAPTIS, I ;
HATZAKIS, M .
MICROELECTRONIC ENGINEERING, 1994, 23 (1-4) :417-420
[4]   LATERAL RESOLUTION OF AUGER-ELECTRON SPECTROSCOPY IN THE ENERGY-RANGE 5-100 KEV - THIN OVERLAYERS ON A HIGH-Z MATERIAL SUBSTRATE [J].
GLEZOS, NM ;
NASSIOPOULOS, AG .
SURFACE SCIENCE, 1991, 254 (1-3) :309-319
[5]   ENERGY DISSIPATION IN A THIN POLYMER FILM BY ELECTRON-BEAM SCATTERING [J].
HAWRYLUK, RJ ;
HAWRYLUK, AM ;
SMITH, HI .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) :2551-2566
[6]   ELECTRON BACKSCATTERING FROM THIN-FILMS [J].
NIEDRIG, H .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :R15-R49
[7]   ENERGY DEPOSITION FUNCTIONS IN ELECTRON RESIST FILMS ON SUBSTRATES [J].
PARIKH, M ;
KYSER, DF .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :1104-1111
[8]   POINT EXPOSURE DISTRIBUTION MEASUREMENTS FOR PROXIMITY CORRECTION IN ELECTRON-BEAM LITHOGRAPHY ON A SUB-100 NM SCALE [J].
RISHTON, SA ;
KERN, DP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01) :135-141
[9]   SELID: A new 3D simulator for E-beam lithography [J].
Rosenbusch, A ;
Glezos, N ;
Kalus, M ;
Raptis, I .
16TH ANNUAL SYMPOSIUM ON PHOTOMASK TECHNOLOGY AND MANAGEMENT, 1996, 2884 :435-441
[10]  
SAITOU, 1973, JPN J APPL PHYS, V12, P941