Two-dimensional pn-junction delineation and individual dopant identification using scanning tunneling microscopy/spectroscopy

被引：16

作者：

Chao, KJ ^{[1
]}

Smith, AR

McDonald, AJ

Kwong, DL

Streetman, BG

Shih, CK

机构：

[1] Univ Texas, Dept Phys, Austin, TX 78712 USA

[2] Univ Texas, Dept Elect & Comp Engn, Austin, TX 78712 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 01期

关键词：

D O I：

10.1116/1.589829

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have used scanning tunneling microscopy and spectroscopy (STM/S) to study multiple pn junctions on cross-sectional surfaces of both Si and GaAs devices. The spectroscopy results indicate that pn junctions can be resolved at the nanometer scale by using the two-dimensional STS technique. STM is also used to identify Zn dopants on GaAs(110) surfaces, A detail dopant location identification method is presented. (C) 1998 American Vacuum Society.

引用

页码：453 / 456

页数：4

共 54 条

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