Anomalous large thermoelectric power on heavily B-doped SiGe thin films with thermal annealing

被引：13

作者：

Kawahara, T

Lee, SM

Okamoto, Y

Morimoto, J

Sasaki, K

Hata, T

机构：

[1] Natl Def Acad, Dept Mat Sci & Engn, Yokosuka, Kanagawa 2398686, Japan

[2] Kanazawa Univ, Grad Sch Nat Sci & Technol, Kanazawa, Ishikawa 9208667, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2002年 / 41卷 / 8B期

关键词：

thermoelectric power; thermoelectric materials; SiGe; superlattice; annealing effects; amorphous semiconductors;

D O I：

10.1143/JJAP.41.L949

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The thermoelectric properties of heavily B-doped SiGe thin films were studied. The electrical resistivity in the high-temperature region was very low, which suggests the possibility of high-temperature use of heavily doped SiGe films. After thermal annealing, the low-temperature deposited samples showed-collapse of the superlattice structure. As deposited condition, the samples might be in amorphous like SiGe thin films apart from good crystallinity. In these films, the anomalous large thermoelectric power was observed in the room temperature region. The power factor reached 4 x 10(0) W/mK(2) at 400 K and 1 x 10(0) W/mK(2) at 900 K.

引用

页码：L949 / L951

页数：3

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