Relationship between charge distribution and its image by electrostatic force microscopy

被引:29
作者
Lambert, J [1 ]
Guthmann, C [1 ]
Saint-Jean, M [1 ]
机构
[1] Univ Paris 07, Phys Solides Grp, F-75251 Paris 05, France
关键词
D O I
10.1063/1.1559411
中图分类号
O59 [应用物理学];
学科分类号
摘要
We shall demonstrate in this article that characterization of the charge distribution by electrostatic force microscopy is not straightforward: we will stress the important role played by the electrostatic images of the scanned charge distribution in the tip and by the operating mode in the formation of extra features in images obtained with this instrument. To illustrate this, we will describe two models that correspond to the scanning of small and extended charge distributions. These models will be compared with experimental images. (C) 2003 American Institute of Physics.
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页码:5369 / 5376
页数:8
相关论文
共 14 条
[1]   Models for quantitative charge imaging by atomic force microscopy [J].
Boer, EA ;
Bell, LD ;
Brongersma, ML ;
Atwater, HA .
JOURNAL OF APPLIED PHYSICS, 2001, 90 (06) :2764-2772
[2]   Real-time evolution of trapped charge in a SiO2 layer:: An electrostatic force microscopy study [J].
Buh, GH ;
Chung, HJ ;
Kuk, Y .
APPLIED PHYSICS LETTERS, 2001, 79 (13) :2010-2012
[3]   On the role of field-induced polarization in the surface electrification of insulators [J].
Cunningham, S .
APPLIED PHYSICS LETTERS, 1996, 69 (23) :3605-3606
[4]   Charge stability on thin insulators studied by atomic force microscopy [J].
Felidj, N ;
Lambert, J ;
Guthmann, C ;
Jean, MS .
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2000, 12 (02) :85-91
[5]   Imaging of stored charges in Si quantum dots by tapping and electrostatic force microscopy [J].
Guillemot, C ;
Budau, P ;
Chevrier, J ;
Marchi, F ;
Comin, F ;
Alandi, C ;
Bertin, F ;
Buffet, N ;
Wyon, C ;
Mur, P .
EUROPHYSICS LETTERS, 2002, 59 (04) :566-571
[6]  
HUDLET S, 1997, THESIS U PARIS 7 PAR
[7]   Role of image forces in non-contact scanning force microscope images of ionic surfaces [J].
Kantorovich, LN ;
Foster, AS ;
Shluger, AL ;
Stoneham, AM .
SURFACE SCIENCE, 2000, 445 (2-3) :283-299
[8]   HIGH-RESOLUTION CAPACITANCE MEASUREMENT AND POTENTIOMETRY BY FORCE MICROSCOPY [J].
MARTIN, Y ;
ABRAHAM, DW ;
WICKRAMASINGHE, HK .
APPLIED PHYSICS LETTERS, 1988, 52 (13) :1103-1105
[9]   Stability of densely contact-electrified charges on thin silicon oxide in air [J].
Morita, S ;
Uchihashi, T ;
Okusako, T ;
Yamanishi, Y ;
Oasa, T ;
Sugawara, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (11) :5811-5814
[10]   Local triboelectricity on oxide surfaces [J].
Saint Jean, M ;
Hudlet, S ;
Guthmann, C ;
Berger, J .
EUROPEAN PHYSICAL JOURNAL B, 1999, 12 (04) :471-477