Degradation of InGaN blue light-emitting diodes under continuous and low-speed pulse operations

被引：28

作者：

Yanagisawa, T ^{[1
]}

Kojima, T ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Energy Elect Inst, Tsukuba, Ibaraki 3058568, Japan

来源：

MICROELECTRONICS RELIABILITY | 2003年 / 43卷 / 06期

关键词：

D O I：

10.1016/S0026-2714(03)00093-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Long-term accelerated degradation tests on InGaN blue light-emitting diodes were performed under continuous and low-speed pulse operations, and the half-life of the optical output was estimated. It was estimated that the lifetime under pulse operation is 2-4 times longer than that in continuous operation. A higher pulse repetition rate confers a longer life. (C) 2003 Elsevier Science Ltd. All rights reserved.

引用

页码：977 / 980

页数：4

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