Degradation of InGaN blue light-emitting diodes under continuous and low-speed pulse operations

被引:28
作者
Yanagisawa, T [1 ]
Kojima, T [1 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Energy Elect Inst, Tsukuba, Ibaraki 3058568, Japan
关键词
D O I
10.1016/S0026-2714(03)00093-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Long-term accelerated degradation tests on InGaN blue light-emitting diodes were performed under continuous and low-speed pulse operations, and the half-life of the optical output was estimated. It was estimated that the lifetime under pulse operation is 2-4 times longer than that in continuous operation. A higher pulse repetition rate confers a longer life. (C) 2003 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:977 / 980
页数:4
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