Characteristics of field-effect transistors based on undoped and B- and N-doped few-layer graphenes

被引：59

作者：

Late, Dattatray J. ^{[1
]}

Ghosh, Anupama ^{[1
,2
]}

Subrahmanyam, K. S. ^{[1
]}

Panchakarla, L. S. ^{[1
]}

Krupanidhi, S. B. ^{[3
]}

Rao, C. N. R. ^{[1
,2
,3
]}

机构：

[1] Jawaharlal Nehru Ctr Adv Sci Res, Int Ctr Mat Sci, Chem & Phys Mat Unit, Bangalore 560064, Karnataka, India

[2] Indian Inst Sci, Solid State & Struct Chem Unit, Bangalore 560012, Karnataka, India

[3] Indian Inst Sci, Ctr Mat Res, Bangalore 560012, Karnataka, India

来源：

SOLID STATE COMMUNICATIONS | 2010年 / 150卷 / 15-16期

关键词：

Graphene; Field-effect transistor; Mobility; Doping; CARBON; OXIDE;

D O I：

10.1016/j.ssc.2010.01.030

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Field-effect transistor characteristics of few-layer graphenes prepared by several methods have been investigated in comparison with those of single-layer graphene prepared by the in situ reduction of single-layer graphene oxide. Ambipolar features have been observed with single-layer graphene and n-type behaviour with all the few-layer graphenes, the best characteristics being found with the graphene possessing 2-3 layers prepared by arc-discharge of graphite in hydrogen. FETs based on boron and nitrogen doped graphene show n-type and p-type behaviour respectively. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：734 / 738

页数：5

共 27 条

[1] Carbon-based electronics [J].

Avouris, Phaedon ;

Chen, Zhihong ;

Perebeinos, Vasili .

NATURE NANOTECHNOLOGY, 2007, 2 (10) :605-615

[2] Electronic confinement and coherence in patterned epitaxial graphene [J].

Berger, Claire ;

Song, Zhimin ;

Li, Xuebin ;

Wu, Xiaosong ;

Brown, Nate ;

Naud, Cecile ;

Mayou, Didier ;

Li, Tianbo ;

Hass, Joanna ;

Marchenkov, Atexei N. ;

Conrad, Edward H. ;

First, Phillip N. ;

de Heer, Wait A. .

SCIENCE, 2006, 312 (5777) :1191-1196

[3] Carbon-Based Field-Effect Transistors for Nanoelectronics [J].

Burghard, Marko ;

Klauk, Hagen ;

Kern, Klaus .

ADVANCED MATERIALS, 2009, 21 (25-26) :2586-2600

[4] Benchmarking nanotechnology for high-performance and low-power logic transistor applications [J].

Chau, R ;

Datta, S ;

Doczy, M ;

Doyle, B ;

Jin, J ;

Kavalieros, J ;

Majumdar, A ;

Metz, M ;

Radosavljevic, M .

IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2005, 4 (02) :153-158

[5] Electronic transport properties of individual chemically reduced graphene oxide sheets [J].

Gomez-Navarro, Cristina ;

Weitz, R. Thomas ;

Bittner, Alexander M. ;

Scolari, Matteo ;

Mews, Alf ;

Burghard, Marko ;

Kern, Klaus .

NANO LETTERS, 2007, 7 (11) :3499-3503

[6] Field effect in epitaxial graphene on a silicon carbide substrate [J].

Gu, Gong ;

Nie, Shu ;

Feenstra, R. M. ;

Devaty, R. P. ;

Choyke, W. J. ;

Chan, Winston K. ;

Kane, Michael G. .

APPLIED PHYSICS LETTERS, 2007, 90 (25)

[7] Self-aligned ballistic molecular transistors and electrically parallel nanotube arrays [J].

Javey, A ;

Guo, J ;

Farmer, DB ;

Wang, Q ;

Yenilmez, E ;

Gordon, RG ;

Lundstrom, M ;

Dai, HJ .

NANO LETTERS, 2004, 4 (07) :1319-1322

[8] Ballistic carbon nanotube field-effect transistors [J].

Javey, A ;

Guo, J ;

Wang, Q ;

Lundstrom, M ;

Dai, HJ .

NATURE, 2003, 424 (6949) :654-657

[9] High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes [J].

Kang, Seong Jun ;

Kocabas, Coskun ;

Ozel, Taner ;

Shim, Moonsub ;

Pimparkar, Ninad ;

Alam, Muhammad A. ;

Rotkin, Slava V. ;

Rogers, John A. .

NATURE NANOTECHNOLOGY, 2007, 2 (04) :230-236

[10] Epitaxial graphene transistors on SIC substrates [J].

Kedzierski, Jakub ;

Hsu, Pei-Lan ;

Healey, Paul ;

Wyatt, Peter W. ;

Keast, Craig L. ;

Sprinkle, Mike ;

Berger, Claire ;

de Heer, Walt A. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (08) :2078-2085

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