Microcrystallinity at SiO2/Si(001) interfaces:: An effect of annealing

被引：26

作者：

Takahashi, I ^{[1
]}

Okita, S

Awaji, N

Sugita, Y

Komiya, S

机构：

[1] Kwansei Gakuin Univ, Sch Sci, Nishinomiya, Hyogo 662, Japan

[2] Fujitsu Labs Ltd, Atsugi, Kanagawa 24301, Japan

来源：

PHYSICA B | 1998年 / 245卷 / 04期

关键词：

X-ray CTR scattering; X-ray reflectivity; SiO2/Si(100) interface structure;

D O I：

10.1016/S0921-4526(97)00897-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

By complemeatary use of X-ray crystal truncation rod (CTR) scattering and difference X-ray reflectivity (DXR), structural properties on ultra-thin thermal oxides grown on Si(001) substrates were obtained. A thin film which contains SiO2 crystallites concentrated at the SiO2/Si(001) interface revealed to have an interfacial thin layer characterized by high electron density. and vice versa. An effect of annealing in Ar gas has been understood consistently. The CTR scattering data indicated that probability of finding the crystallites in the oxide film remained, but the lattice constant of the crystallites increased along the direction perpendicular to the interface by the annealing. The decrease in the density calculated by this volumetric expansion agrees well with the decrease in average density of the interfacial thin layer observed by the DXR measurements. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：306 / 310

页数：5

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