OXIDATION AND THE STRUCTURE OF THE SILICON-OXIDE INTERFACE

被引：101

作者：

STONEHAM, AM ^{[1
]}

GROVENOR, CRM ^{[1
]}

CEREZO, A ^{[1
]}

机构：

[1] UNIV OXFORD,DEPT MET & SCI MAT,OXFORD OX1 3PH,ENGLAND

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1987年 / 55卷 / 02期

关键词：

D O I：

10.1080/13642818708211203

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：201 / 210

页数：10

共 18 条

[1] ATKINSON A, 1987, IN PRESS PHIL MAG B
[2] STRAIN BROADENING OF THE DANGLING-BOND RESONANCE AT THE (111)SI-SIO2 INTERFACE
BROWER, KL
[J]. PHYSICAL REVIEW B, 1986, 33 (07): : 4471 - 4478
[3] LOW-PRESSURE OXIDATION OF SILICON STIMULATED BY LOW-ENERGY ELECTRON-BOMBARDMENT
COLLOT, P
GAUTHERIN, G
AGIUS, B
RIGO, S
ROCHET, F
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 52 (06): : 1051 - 1069
[4] OXIDATION OF SILICON - STRAIN AND LINEAR KINETICS
DOREMUS, RH
[J]. THIN SOLID FILMS, 1984, 122 (03) : 191 - 196
[5] STRESS IN THERMAL SIO2 DURING GROWTH
EERNISSE, FP
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 8 - 10
[6] STRAIN-ASSISTED EPITAXIAL-GROWTH OF NEW ORDERED COMPOUNDS
FLYNN, CP
[J]. PHYSICAL REVIEW LETTERS, 1986, 57 (05) : 599 - 602
[7] Grovenor C. R. M., 1985, Layered Structures, Epitaxy, and Interfaces Symposium, P199
[8] GROVENOR CRM, 1986, IN PRESS SILICON INS
[9] OXYGEN ADSORPTION ON SILICON AND GERMANIUM
HAGSTRUM, HD
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (06) : 1020 - &
[10] PROBING THE TRANSITION LAYER AT THE SIO2-SI INTERFACE USING CORE LEVEL PHOTOEMISSION
HOLLINGER, G
HIMPSEL, FJ
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 93 - 95