Boron diffusion in compressively stressed float zone silicon induced by Si3N4 films

被引：12

作者：

Zaitsu, Y

Shimizu, T

Takeuchi, J

Matsumoto, S

Yoshida, M

Abe, T

Arai, E

机构：

[1] Keio Univ, Fac Sci & Technol, Yokohama, Kanagawa 223, Japan

[2] Kyusyu Inst Design, Minami Ku, Fukuoka 815, Japan

[3] Shin Etsu Hanodai Co Ltd, SEH Res & Dev Ctr, Gunma 37901, Japan

[4] Nagoya Inst Technol, Showa Ku, Nagoya, Aichi 466, Japan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1998年 / 145卷 / 01期

关键词：

D O I：

10.1149/1.1838244

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The effect of stress during annealing induced by Si3N4 films on boron diffusion in float zone-silicon has been studied and a correlation between vacancy concentration and compressive strain in the substrate has been clarified. From the results of Si3N4 film thickness and annealing temperature dependence on both boron diffusivity and stress in the substrates, boron diffusion was found to be retarded and the substrate was found to have high stress, having Elastic compressive strain during annealing under Si3N4 films. These results indicate that excess vacancies are generated by elastic compressive strain, causing the retardation of interstitial-mediated diffusion of boron.

引用

页码：258 / 264

页数：7

共 21 条

[1] FILM STRESS-RELATED VACANCY SUPERSATURATION IN SILICON UNDER LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE FILMS [J].