Faceted inversion domain boundary in GaN films doped with Mg

被引:107
作者
Romano, LT
Northrup, JE
Ptak, AJ
Myers, TH
机构
[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA
[2] W Virginia Univ, Dept Phys, Morgantown, WV 26506 USA
关键词
D O I
10.1063/1.1318731
中图分类号
O59 [应用物理学];
学科分类号
摘要
Homoepitaxial GaN films, doped with Mg, were grown by rf-plasma molecular-beam epitaxy on Ga-polarity (0001) templates. Convergent-beam electron diffraction analysis establishes that the film polarity changes from [0001] to [000 (1) under bar] when the Mg flux during growth is approximately 1 ML/s. Secondary ion mass spectrometry indicates a doping concentration of similar to 10(20) cm(-3) in the film where the inversion occurs, and a reduced Mg incorporation in the [000 (1) under bar] material. Transmission electron microscopy shows that the inversion domain boundary is faceted predominantly along the {0001} and {h,h,-2h,l} planes, with l/h approximately equal to 3. Using first-principles total energy calculations, we show that the {h,h,-2h,l} segments of the boundary are stabilized by the incorporation of Mg in threefold coordinated lattice sites. (C) 2000 American Institute of Physics. [S0003- 6951(00)03042-4].
引用
收藏
页码:2479 / 2481
页数:3
相关论文
共 10 条
  • [1] [Anonymous], 1997, BLUE LASER DIODE GAN, DOI DOI 10.1007/978-3-662-03462-0
  • [2] Mg-doped GaN:: Similar defects in bulk crystals and layers grown on Al2O3 by metal-organic chemical-vapor deposition
    Liliental-Weber, Z
    Benamara, M
    Swider, W
    Washburn, J
    Grzegory, I
    Porowski, S
    Lambert, DJH
    Eiting, CJ
    Dupuis, RD
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (26) : 4159 - 4161
  • [3] Interdiffusion of In and Ga in InGaN quantum wells
    McCluskey, MD
    Romano, LT
    Krusor, BS
    Johnson, NM
    Suski, T
    Jun, J
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (09) : 1281 - 1283
  • [4] MYERS TH, UNPUB
  • [5] Inversion of wurtzite GaN(0001) by exposure to magnesium
    Ramachandran, V
    Feenstra, RM
    Sarney, WL
    Salamanca-Riba, L
    Northrup, JE
    Romano, LT
    Greve, DW
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (06) : 808 - 810
  • [6] Inversion domains in GaN grown on sapphire
    Romano, LT
    Northrup, JE
    OKeefe, MA
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (16) : 2394 - 2396
  • [7] Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy
    Smorchkova, IP
    Haus, E
    Heying, B
    Kozodoy, P
    Fini, P
    Ibbetson, JP
    Keller, S
    DenBaars, SP
    Speck, JS
    Mishra, UK
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (06) : 718 - 720
  • [8] SIMULTANEOUS CALCULATION OF THE EQUILIBRIUM ATOMIC-STRUCTURE AND ITS ELECTRONIC GROUND-STATE USING DENSITY-FUNCTIONAL THEORY
    STUMPF, R
    SCHEFFLER, M
    [J]. COMPUTER PHYSICS COMMUNICATIONS, 1994, 79 (03) : 447 - 465
  • [9] Pyramidal defects in metalorganic vapor phase epitaxial Mg doped GaN
    Vennéguès, P
    Benaissa, M
    Beaumont, B
    Feltin, E
    De Mierry, P
    Dalmasso, S
    Leroux, M
    Gibart, P
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (06) : 880 - 882
  • [10] ZUO JM, CBED SIMULATION PROG