Ambipolar Memory Devices Based on Reduced Graphene Oxide and Nanoparticles

被引：143

作者：

Myung, Sung ^{[2
,3
]}

Park, Jaesung ^{[1
]}

Lee, Hyungwoo ^{[2
,3
]}

Kim, Kwang S. ^{[1
]}

Hong, Seunghun ^{[2
,3
]}

机构：

[1] Pohang Univ Sci & Technol, Ctr Superfunct Mat, Dept Chem, Pohang 790784, South Korea

[2] Seoul Natl Univ, Dept Biophys & Chem Biol, Seoul 151747, South Korea

[3] Seoul Natl Univ, Dept Phys & Astron, Seoul 151747, South Korea

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 18期

关键词：

SUSPENDED GRAPHENE; FILMS; GAS;

D O I：

10.1002/adma.200903267

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A directed-assembly method on the basis of graphene oxide (GO) pieces is developed, which allowed us to mass-produce a uniform array of graphene-based ambipolar memory devices using only conventional microfabrication facilities. Significantly, we successfully demonstrated that this device can be operated as both conventional conductivity-switching memory and new type-switching memory by adjusting the charge density on the nanoparticles. [GRAPHICS] .

引用

页码：2045 / +

页数：6

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