Nitrogen doping in molecular-beam epitaxy growth of II-VI semiconductors

被引：4

作者：

Baron, T

Saminadayar, K

Tatarenko, S

Lugauer, HJ

Waag, A

Landwehr, G

机构：

[1] CEA, SPZM, Dept Rech Fondamentale Mat Condensee, F-38054 Grenoble 9, France

[2] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 184卷

关键词：

D O I：

10.1016/S0022-0248(97)00791-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on the p-doping properties of the II-VI related compounds ZnTe, CdTe, BeTe and MgTe. Following a comparative study of nitrogen doping in these materials, we perceive the formation of nitride compounds as responsible for the trend observed in N-doped telluride materials. We have also investigated a possible enhanced intermixing process in CdZnMgTe/CdZnTe and ZnSe/BeTe superlattices due to nitrogen incorporation. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：415 / 418

页数：4

共 9 条

[1] Arnoult A, 1998, J CRYST GROWTH, V184, P445
[2] NITROGEN DOPING OF TELLURIUM-BASED II-VI COMPOUNDS DURING GROWTH BY MOLECULAR-BEAM EPITAXY
BARON, T
SAMINADAYAR, K
MAGNEA, N
[J]. APPLIED PHYSICS LETTERS, 1995, 67 (20) : 2972 - 2974
[3] Giant interdiffusion induced by nitrogen doping in CdZnMgTe/CdZnTe superlattices
Baron, T
Kany, F
Saminadayar, K
Magnea, N
Cox, RT
[J]. APPLIED PHYSICS LETTERS, 1997, 70 (22) : 2963 - 2965
[4] GRADED BAND-GAP OHMIC CONTACT TO P-ZNSE
FAN, Y
HAN, J
HE, L
SARAIE, J
GUNSHOR, RL
HAGEROTT, M
JEON, H
NURMIKKO, AV
HUA, GC
OTSUKA, N
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (26) : 3160 - 3162
[5] BLUE-GREEN LASER-DIODES
HAASE, MA
QIU, J
DEPUYDT, JM
CHENG, H
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (11) : 1272 - 1274
[6] BETE ZNSE GRADED BAND-GAP OHMIC CONTACTS TO P-ZNSE
MENSZ, PM
[J]. APPLIED PHYSICS LETTERS, 1994, 64 (16) : 2148 - 2150
[7] Nitrogen doping of Te-based II-VI compounds
Tatarenko, S
Baron, T
Arnoult, A
Cibert, J
Grun, M
Haury, A
dAubigne, YM
Wasiela, A
Saminadayar, K
[J]. JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 682 - 687
[8] Laser diodes based on beryllium-chalcogenides
Waag, A
Fischer, F
Schull, K
Baron, T
Lugauer, HJ
Litz, T
Zehnder, U
Ossau, W
Gerhard, T
Keim, M
Reuscher, G
Landwehr, G
[J]. APPLIED PHYSICS LETTERS, 1997, 70 (03) : 280 - 282
[9] Molecular-beam epitaxy of beryllium-chalcogenide-based thin films and quantum-well structures
Waag, A
Fischer, F
Lugauer, HJ
Litz, T
Laubender, J
Lunz, U
Zehnder, U
Ossau, W
Gerhardt, T
Moller, M
Landwehr, G
[J]. JOURNAL OF APPLIED PHYSICS, 1996, 80 (02) : 792 - 796

← 1 →