Electrical and reliability characteristics of an ultrathin TaOxNy gate dielectric prepared by ND3 annealing of Ta2O5

被引：19

作者：

Jung, H ^{[1
]}

Im, K

Yang, D

Hwang, H

机构：

[1] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[2] Jusung Engn, Kyunggi 464890, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 12期

关键词：

gate dielectric; leakage current; MOSFET; reliability; TaO(x)Ny; Ta2O5;

D O I：

10.1109/55.887466

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter describes a unique process for the preparation of high quality tantalum oxynitride (TaOxNy) via the ND3 annealing of Ta-2 O-5, for use in gate dielectric applications. Compared with tantalum oxide (Ta-2 O-5), a significant improvement in the dielectric constant was obtained by the ammonia treatment followed by light reoxidation in a wet ambient. We were able to confirm nitrogen incorporation in the tantalum oxynitride (TaOxNy) by Auger electron spectroscopy. Compared with NH3 nitridation, tantalum oxynitride prepared by nitridation in ND3 shows less charge trapping and larger charge-to-breakdown characteristics.

引用

页码：563 / 565

页数：3

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